Self-assembled Bismuth selenide (Bi2se3) quantum dots grown by molecular beam epitaxy

Authors

Marcel S. Claro, CUNY City CollegeFollow
Ido Levy, CUNY City CollegeFollow
Abhinandan Gangopadhyay, Arizona State University
David J. Smith, Arizona State University
Maria C. Tamargo, CUNY City CollegeFollow

Document Type

Article

Publication Date

3-4-2019

Abstract

We report the growth of self-assembled Bi2se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray reflectance spectroscopy is presented. Raman spectra confirm the QD quality. The quantum dots are crystalline, with hexagonal shape, and have average dimensions of 12-nm height (12 quintuple layers) and 46-nm width, and a density of 8.5 × 109 cm−2. this droplet growth technique provides a means to produce topological insulator QDs in a reproducible and controllable way, providing convenient access to a promising quantum material with singular spin properties.

Comments

This article was originally published in Scientific Reports, available at DOI: 10.1038/s41598-019-39821-y.

This article is licensed under a Creative Commons Attribution 4.0 International License.