Document Type
Article
Publication Date
3-20-2020
Abstract
In-plane compressively strained α-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity, and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained α-Sn films on InSb(100), without heating the substrate during growth nor using any dopants. The α-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film’s surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy, and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed us to obtain an improved insight into the electronic structure of the 3D topological Dirac semimetal α-Sn above the Fermi level.
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Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons, Structural Materials Commons
Comments
This article was originally published in APL MATERIALS, available at https://doi.org/10.1063/1.5142841
This work is distributed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).